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HiPerFASTTM IGBT
IXGH24N50B IXGH24N60B
VCES 500 V 600 V
I C(25) 48 A 48 A
VCE(sat) 2.3 V 2.5 V
tfi 80 ns 80 ns
Preliminary data
Symbol
Test Conditions 24N50
Maximum Ratings 24N60 600 600 20 30 48 24 96 ICM = 48 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 1.13/10 6 V V V V A A A A W C C C C Nm/lb.in. g
TO-247 AD
VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
T J = 25C to 150C T J = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE= 15 V, TVJ = 125C, RG = 22 W Clamped inductive load, L = 100 mH TC = 25C
500 500
C (TAB) G C E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features * International standard packages JEDEC TO-247 AD * High frequency IGBT * High current handling capability * 3rd generation HDMOSTM process * MOS Gate turn-on - drive simplicity
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3)
Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 24N50 24N60 TJ = 25C TJ = 125C 500 600 2.5 V V V mA mA nA V V * * * * * AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 mA, VGE = 0 V = 250 mA, VCE = VGE
5 200 1 100
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
Advantages * High power density * Switching speed for high frequency applications * Easy to mount with 1 screw (insulated mounting screw hole)
24N50 24N60
2.3 2.5
IXYS reserves the right to change limits, test conditions, and dimensions.
95584 B (7/00)
(c) 2000 IXYS All rights reserved
1-4
IXGH24N50B
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 9 13 1500 VCE = 25 V, VGE = 0 V, f = 1 MHz 135 40 90 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 11 30 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 25 15 0.6 150 80 24N50B 24N60B 0.62 0.80 25 15 0.8 250 100 24N50B 24N60B 0.9 1.4 0.25 200 150 120 15 40 S pF pF pF nC nC nC ns ns mJ ns ns mJ mJ ns ns mJ ns ns mJ mJ 0.83 K/W K/W
IXGH24N60B
TO-247 AD (IXGH) Outline
gfs C ies Coes C res Qg Qge Qgc td(on) t ri Eon td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 %
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8
Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG
1.5 2.49
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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IXGH24N50B
50
TJ = 125C
IXGH24N60B
VGE = 15V
40
VGE = 13V 11V 9V
7V
200
TJ = 25C
VGE = 15V 13V
160
IC - Amperes
IC - Amperes
30 20 10
5V
120 80 40
11V
9V
7V 5V
0 0 1 2 3 4 5
0
0
2
4
6
8
10
VCE - Volts
VCE - Volts
Fig. 1. Saturation Voltage Characteristics
Fig. 2. Extended Output Characteristics
50
TJ = 125C
1.6
VGE = 15V 13V 11V 9V VGE = 15V IC = 48A
IC - Amperes
7V
VCE (sat) - Normalized
40 30 20 10 0 0 1
1.4 1.2
IC = 24A
1.0
IC = 12A
5V
0.8 0.6 25
2
3
4
5
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Fig. 3. Saturation Voltage Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
100
VCE = 10V
1.2
80
BV/VGE(th) - Normalized
1.1 1.0 0.9 0.8 0.7 -50
VGE(th) IC = 3mA
IC - Amperes
60 40
TJ = 125C
BVCES IC = 3mA
20
TJ = 25C
0 3 4 5 6 7 8 9 10 11 12
-25
0
25
50
75
100 125 150
Fig. 5. Admittance Curves
Fig. 6. Temperature Dependence of BVDSS & VGE(th)
(c) 2000 IXYS All rights reserved
3-4
IXGH24N50B
IXGH24N60B
2.5
TJ = 125C
2.5 24N60B
E(ON) / E(OFF) - milliJoules
2.0 1.5
E(ON) / E(OFF) - milliJoules
RG = 10W E(OFF)
E(ON)
TJ = 125C IC = 24A
24N60B
2.0 1.5 1.0
E(ON) E(OFF)
1.0 0.5 0.0
0 10 20 30 40 50
0.5 0.0
0
10
20
30
40
50
IC - Amperes
RG - Ohms
Fig. 7. Dependence of tfi and EOFF on IC.
Fig. 8. Dependence of tfi and EOFF on RG.
15 12
IC = 24A VCE = 300V
100
0B 24N5 0B 24N6
9 6 3 0 0 20 40 60 80 100
IC - Amperes
VGE - Volts
10
TJ = 125C
RG = 10W
1
dV/dt < 5V/ns
0.1 0 100 200 300 400 500 600
Qg - nanocoulombs
VCE - Volts
Fig. 9. Gate Charge
Fig. 10. Turn-off Safe Operating Area
1
D=0.5 D=0.2 D=0.1 D=0.05 D=0.02
RthJC - K/W
0.1
0.01
D=0.01
Single pulse
D = Duty Cycle
0.001 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds Fig. 11. Transient Thermal Resistance
(c) 2000 IXYS All rights reserved
4-4

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